Capacitance-Voltage characteristics of nanowire trigate MOSFET considering wave function penetration

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Md.Alamgir Hossain
Md.Alamgir Hossain
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Md. Alamgir Hossain
Md. Alamgir Hossain
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Arif Mahmud
Arif Mahmud
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Mahfuzul Haque Chowdhury
Mahfuzul Haque Chowdhury
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Md. Mijanur Rahman
Md. Mijanur Rahman
α Dhaka University of Engineering & Technology

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Capacitance-Voltage characteristics of nanowire trigate MOSFET considering wave function penetration

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References

9 Cites in Article
  1. D Ward,R Dutton (1978). A charge-oriented model for MOS transistor capacitances.
  2. F Rana,S Tiwari,D Buchanan (1996). Selfconsistent modeling of accumulation layers and tunneling currents through very thin oxides.
  3. Wei-Kai Shih,Everett Wang,Srinivas Jallepalli,Francisco Leon,Christine Maziar,Al Tasch (1998). Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide.
  4. S-H Lo,D Buchanan,Y Taur,W Wang (1997). Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's.
  5. S Mudanai (2000). Modeling of direct tunneling current through gate dielectric stacks.
  6. Craig Lent,David Kirkner (1990). The quantum transmitting boundary method.
  7. S Takagi,A Toriumi (1995). Quantitative understanding of inversion-layer capacitance in Si MOSFET's.
  8. Frank Schwierz,Hei Wong,Juin Liou (2010). Nanometer CMOS.
  9. Serge Luryi (1988). Quantum capacitance devices.

Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

Md.Alamgir Hossain. 2012. \u201cCapacitance-Voltage characteristics of nanowire trigate MOSFET considering wave function penetration\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 12 (GJRE Volume 12 Issue F2): .

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Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

Version of record

v1.2

Issue date

March 6, 2012

Language
en
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Capacitance-Voltage characteristics of nanowire trigate MOSFET considering wave function penetration

Md. Alamgir Hossain
Md. Alamgir Hossain
Arif Mahmud
Arif Mahmud
Mahfuzul Haque Chowdhury
Mahfuzul Haque Chowdhury
Md. Mijanur Rahman
Md. Mijanur Rahman

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