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ReserarchID
4Y3R1
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
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This paper attempted to assess the attitudes of students in
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Inclusion has become a priority on the global educational agenda,
A novel SRAM column was designed. SRAM column includes SRAM cell, column select circuit, precharging circuit, and sense amplifier. The transmission gates are used for word line access in place of pass transistors which rectify the voltage drop problem; also there is an NMOS switch at the bottom of the cell which restricts the short circuit current flowing through the cell during operation. Using the standard process parameters of the PTM 7nm transistor model the SRAM column was simulated by HSPICE. The simulation results indicate the proper logic operation of the column and also it shows the low power operation.
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