Electrical Characteristics of trigate FinFET
FinFET devices are comprehensively investigated owing to the projection for application in the CMOS integrated circuits fabrication. Deducing MOSFET size have great influence on electrostatic characteristic.The indiscriminate variations of the characteristics lead to a divergence effect which is imperative from the point of view of design and manufacture. We have considered only n-channel devices. The behaviors of hole mobility of multigate devices is of course of great importance [1-2]. Electron mobility of n-channel FinFET has simulated with respect to effective electric field. Mobility degradation has been observed with thinner silicon film, at higher electric field, which can be attributed to “volume inversion” in FinFET. In this paper, different types of electrical characteristics have been simulated for different operating regions and different channel lengths and also for different oxide thickness. The considerations are illustrated with measurement data of a series of devices and with distributions of the parameters extracted from these data. The analytical expressions in this work can be useful tool in device design and optimization.
