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Herein we study propagation of surface waves at a boundary of an isotropic media and a multilayered hyperbolic metamaterial. The structure dispersion is discussed for various cases of a hyperbolic metamaterial. It is demonstrated that it is possible to tune the frequency range of surface waves by varying the thickness of dielectric sheets. It is also shown that this frequency range can be broadened by decreasing the thickness of the dielectric in the metal-dielectric compound or by replacing the isotropic media with a metal. It is also shown that the mentioned effect can be achieved by increasing the doping concentration of the semiconductor if the metamaterial/semiconductor structure is considered. The effective medium approximation is used and its validity in the long-wavelength limit is justified by investigating the electromagnetic field variations over one period of the proposed structure.
T. Gric. 2016. \u201cHyperbolic Metamaterial Interface: Propagation of Surface Waves\u201d. Global Journal of Research in Engineering - J: General Engineering GJRE-J Volume 16 (GJRE Volume 16 Issue J2): .
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
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Total Score: 133
Country: Canada
Subject: Global Journal of Research in Engineering - J: General Engineering
Authors: T. Gric, M. Cada, J. Pistora (PhD/Dr. count: 0)
View Count (all-time): 163
Total Views (Real + Logic): 3830
Total Downloads (simulated): 1836
Publish Date: 2016 06, Mon
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Herein we study propagation of surface waves at a boundary of an isotropic media and a multilayered hyperbolic metamaterial. The structure dispersion is discussed for various cases of a hyperbolic metamaterial. It is demonstrated that it is possible to tune the frequency range of surface waves by varying the thickness of dielectric sheets. It is also shown that this frequency range can be broadened by decreasing the thickness of the dielectric in the metal-dielectric compound or by replacing the isotropic media with a metal. It is also shown that the mentioned effect can be achieved by increasing the doping concentration of the semiconductor if the metamaterial/semiconductor structure is considered. The effective medium approximation is used and its validity in the long-wavelength limit is justified by investigating the electromagnetic field variations over one period of the proposed structure.
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