Bio
Dr. Pourus Mehta is a physicist and researcher at the Electronics Division of Bhabha Atomic Research Centre (BARC), Mumbai, India. He holds a Ph.D. in Physics, specializing in Semiconductor Device Physics and Technology. His research focuses on the design, simulation, and characterization of semiconductor devices, including silicon drift detectors with on-chip JFET, single crystal diamond detectors for charge particle detection, and novel silicon-based retina sensors for patients with macula degeneration. He has also contributed to the development of low-cost solid-state spirometers for rural healthcare. Dr. Mehta has authored multiple peer-reviewed papers in both international and national journals and serves as a reviewer for the Global Journal of Research in Engineering.
Educational Journey
Ph.D. (Physics) • Physics
Experience
Bhabha Atomic Research Centre
0 - 0Editors Role
Reviewer
GJRE
2012 -Research
Studies on Application of Single Crystal Diamond for Charge Particle Detection: Design, TCAD Simulations, Technology Development, & Dc Characterization
Single crystal Diamond based Charge Particle detectors have been realized through a pilot stage fabrication run at the Indian Institute of Technology-Bombay (IIT-B). Device simulations in Technology Computer Aided Design (TCAD) were employed to study the physics of charge transport within the detector. Static case simulations revealed values of critical dc performance parameters like total leakage current at applied bias as well as the intrinsic bulk resistance offered by the detector. Dynamic case simulations meant to study the effect of alpha radiation were also conducted. They indicated a certain probability of charge multiplication at low fields within the diamond crystal which needs further experimental investigation to validate. Device simulations also proved helpful in verification and validation of experimental results. Technology for fabrication of diamond detectors was developed through an iterative process spread across several runs to realize a robust device. DC characterization of the fabricated diamond detectors was performed to extract the terminal current at operating voltage (100V), intrinsic bulk resistance of the detector as well as the trend of the I-V curve.
Development of First Proto-Types of a Low-Cost Computer based Solid-State Spirometer for Application in Rural Health-Care Centres Across India
India being an emerging economy, it concentrates maximum resources towards indigenization of various technologies making them economically viable to the general population. Presently roughly half of the country dwells in villages and small towns where even basic sanitation and primary health-care facilities are virtually non-existent. Deteriorating environmental conditions have lead to increased susceptibility to various respiratory diseases prompting an early diagnosis from preventive health considerations. All these factors contribute to a product development philosophy which addresses cost considerations more profoundly in addition to technical accuracy. This paper demonstrates the development of a low cost, portable Spirometer for application in rural health-care centres across India. First proto-type of a Computer based Spirometer system has been realized employing a solidstate pressure sensor based approach. A dedicated analog signal acquisition and processing channel was designed and tested in tandem with the solid-state pressure sensor. Calibration of the pressure sensor for known values of applied pressure was performed for linearity tests. The 8051 core was employed in designing the micro-controller firmware program for digitization and transmission of the signal to the computer. Dedicated computer software for data acquisition, display and analysis was developed in Lab-windows platform.
Development of Commercial Grade Silicon Drift Detector with on-Chip JFET: Device Design, Technology & Characterization
Proto-type Silicon Drift Detectors (SDDs) have been realized through a pilot stage fabrication run at the Micro-fabrication facility at Indian Institute of Technology - Bombay (IIT-B). Taking precedence from the fabrication run at IIT-B, commercial grade SDDs with on-chip low noise JFETs are being developed for low energy X-ray spectroscopy and position sensing applications using silicon bipolar technology available with Bharat Electronics Ltd (BEL), Bangalore. This paper presents a detailed illustrative view on the design; fabrication and characterization of the SDDs & in-built JFETs fabricated at BEL. Traditionally, detectors are fabricated over high resistivity silicon substrates whereas JFETs are fabricated over low-resistivity silicon. To design a process for fabrication of both SDD and JFET over high resistivity silicon posed a sufficient technological challenge. Simulations in Technology Computer Aided Design (TCAD) proved helpful in arriving at optimum process parameter values for fabrication of SDDs and on-chip JFETs over the same high resistivity silicon substrate. SDDs & low noise JFETs fabricated at BEL were characterized to extract dc (I-V) performance parameters like total leakage current at anode, transconductance etc. These results formed precursors to fine-tuning the process for the next run aimed at achieving an even lower leakage current level.
A First Principleas Approach to Study of the Silicon Drift Detector with Embedded JFET: Noise Analysis, Simulations & Analytical Modeling
Proto-type commercial grade Silicon Drift Detectors (SDDs) with on-chip low noise JFETs have been realized using silicon bipolar technology at Bharat Electronics Ltd (BEL), Bangalore. Noise analysis articulating the relationships of various noise sources on the electrical parameters of the fabricated SDD and JFET have been discussed. TCAD device simulations have been performed for the SDD and on-chip JFET for static (dc) and dynamic cases. The static case simulations revealed values of critical dc performance parameters like leakage current, anode capacitance etc. Dynamic simulations meant to study the effect of radiation, revealed the relationship between drift time & drift distance within the detector. Analytical modeling of the I-V characteristics of the SDD has also been performed to predict the leakage current behavior for various other designs fabricated at BEL.
A Proof of Principle Study of a Novel Silicon based Retina Sensor for Patients with Macula Degeneration
Recent advances in semiconductor technology have made it possible to achieve imaging devices that can serve as bionic retinas when implanted within the human eye. Traditional concepts for bionic retina prosthesis involve implantation of a CMOS CCD array in place of the dysfunctional retina of the patient [Ref. 2]. This concept suffers from a limitation of a finite battery life, which leads to frequent replacement of batteries. Secondly, the need to bias each pixel makes the number of electrodes large enough to occupy a large portion of active area on the chip. Moreover, more number of electrodes means greater data bandwidth required for restoring vision. It is proposed to use passive devices like solid state photo-voltaic Cells, which instead of consuming external power would in fact generate signals to stimulate the nerve fibers of the optic nerve. The need for digital data processing can be circumvented as the visual information (photo-generated analog signal) is directly coupled to the ganglion fibers of the macula region. The use of silicon as sensor material makes the device sensitive to infrared wavelengths making it possible for the recipient to have good visibility even at night.
