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A TCAD Simulation Study of Cylindrical Gate All Around (CGAA) MOSFETs
Dr. Santosh K. Gupta, S. Baishya
Volume 12 Issue 9
Global Journal of Research in Engineering
Volume 12 Issue 9
Global Journal of Research in Engineering
Due to aggressive scaling of transistors SCEs has become the limiting factor for further scaling of the conventional MOSFETs. To overcome this limitation a large number of new device architectures have been proposed. One of such device structures is cylindrical gate all around (CGAA) MOSFET that seems to be most suitable to be studied further for different applications point of view. In this paper we report the suitability analysis of CGAA MOSFETs for low voltage, low power and analog applications. We report many interesting findings through 3D TCAD simulations of CGAA MOSFETs.
