Magnetoresistance measurements were made on Thin Films of InxGa1-xAs from Electrical resistivity and Hall Effect measurements. Films used in this study were grown on single crystal GaAs substrate by Molecular Beam Epitaxial method. Measurements were made at room temperature and up to field strength of 5.5KG. Resistivity of GaAs and In0.14Ga0.86As at room temperature are 65.3 Ohm-cm and 7.77 × 10-1 Ohm-cm respectively and for samples with x ≈0.185 and ≈0.205 resistivity at room temperature are 1.06× 103 Ohm-cm and 2.54 × 103 Ohm-cm respectively. Hall coefficients were calculated for all samples. Temperature variations of these values are presented in a temperature region 273K to 323K. From the measurements it is found that GaAs and In0.14Ga0.86As samples ΔR/R0 show a linear variation with magnetic field. But for In0.185Ga0.815As and In0.205Ga0.795As films ΔR/R0 initially decreases and then increases with increasing fields. Results obtained are explained in the light of the existing theories and they are found to be in good agreement with theories and also with the published results of other workers.