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AC Characteristics of a Dual Gate Large Area Graphene MOSFET
Md. Tawabur Rahman, Ashish Kumar Roy, Md. Shamim Sarker, Md. Tajul Islam
Volume 14 Issue 4
Global Journal of Research in Engineering
Volume 14 Issue 4
Global Journal of Research in Engineering
This paper presents a detailed study of RF characteristics together with the high frequency performance of dual gate large area graphene MOSFET. A quasi analytical modeling approach is presented here. To know the RF characteristics of a graphene MOSFET, the transconductance is simulated using small signal equivalent model. Finally the intrinsic top and back gate gain of graphene MOSFET are also shown which are very important figure of merit for RF applications.
